| PART |
Description |
Maker |
| BF1107 BF1107W BF1107_1107W_3 |
From old datasheet system
N-channel single gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 3SK274 |
RF Dual Gate FETs
|
TOSHIBA
|
| 3SK257 |
RF Dual Gate FETs
|
TOSHIBA
|
| BF1100 BF1100R |
Dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors]
|
| BF908R BF908 |
Dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1212WR BF1212 BF1212R BF1212-2015 BF1212-15 |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Quanzhou Jinmei Electro...
|
| BF120210 BF1202.215 |
N-channel dual-gate PoLo MOS-FETs
N-channel dual-gate PoLo MOS-FETs
|
NXP Semiconductors
|
| TC3967 |
2 W Packaged Single-Bias PHEMT GaAs Power FETs
|
Transcom, Inc.
|
| TC3918 |
Packaged Single-Bias Low Noise PHEMT GaAs FETs
|
Transcom, Inc.
|
| 2SK0657 2SK657 2SK06572SK657 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
M-A1
Small-signal device - Small-signal FETs - MOS FETs
|
panasonic
|
